Title :
Monolithic 40 to 60 GHz LNA
Author :
Camilleri, N. ; Chye, P. ; Lee, A. ; Gregory, P.
Author_Institution :
Avantek Inc., Folsom, CA, USA
Abstract :
A monolithic broadband low-noise amplifier (LNA) using MESFET technology has been demonstrated at U-band. This monolithic chip has demonstrated better than 7-dB gain with less than 1.5-dB ripple and a worst-case noise figure of 7.5 dB across the 40-60-GHz band. This chip has also demonstrated better than +8 dBm of output power across the U-band. Lower noise figure numbers are expected when such MMICs (monolithic microwave integrated circuits) are processed using optimized low-noise MESFET devices. These are state-of-the-art results for MESFETs and millimeter-wave amplifier technologies.<>
Keywords :
MMIC; Schottky gate field effect transistors; microwave amplifiers; wideband amplifiers; 40 to 60 GHz; 7.5 dB; LNA; MESFET technology; MMICs; U-band; low-noise MESFET devices; millimeter-wave amplifier technologies; monolithic broadband low-noise amplifier; worst-case noise figure; Integrated circuit noise; Low-noise amplifiers; MESFET integrated circuits; MMICs; Microwave devices; Microwave integrated circuits; Millimeter wave technology; Noise figure; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99651
