DocumentCode
242488
Title
Recovery of PMOSFET NBTI at different cycles
Author
Yanrong Cao ; Yi Yang ; Cheng Cao ; Wenlong He ; Xuefeng Zheng ; Xiaohua Ma ; Yue Hao
Author_Institution
Sch. of Mechano-Electr. Eng., Xidian Univ., Xi´an, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
Negative Bias Temperature Instability (NBTI) has become a serious reliability problem, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we studied the recovery of NBTI systemically at different cycles, and explained the various recovery phenomena and concluded the possible processes occurring in the recovery.
Keywords
integrated circuit reliability; interface states; negative bias temperature instability; power MOSFET; PMOSFET NBTI recovery; degradation process; different cycles; interface traps; negative bias temperature instability; oxide charges; reliability problem; Abstracts; Degradation; MOSFET circuits; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021668
Filename
7021668
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