Title :
The beat-frequency circuit for monitoring duty-cycle shift based on BTI effect
Author :
Fang Qiao ; Yandong He ; Ganggang Zhang ; Xing Zhang
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Abstract :
Circuit reliability issues have great attention to the researchers, especially bias temperature instability (BTI). Obviously, the threshold voltage of the device degraded when the MOS is in the stress mode. For CMOS digital circuits, duty cycle of the signal can shift. In this paper, the beat-frequency circuit design has been verified by the duty-cycle shift of buffer chain. The two ring oscillators (RO) with the same size as the comparison circuit, and the output as the beat frequency to measure the duty-cycle shift, where one is stressed, and the other is unstressed. We found that the duty-cycle increases as the stress time increases. The circuit is demonstrated by using the SMIC 65nm, 1.2V technology.
Keywords :
CMOS digital integrated circuits; buffer circuits; integrated circuit design; integrated circuit reliability; monitoring; negative bias temperature instability; BTI effect; CMOS digital circuits; beat-frequency circuit; bias temperature instability; buffer chain; circuit reliability; duty-cycle shift; ring oscillators; size 65 nm; threshold voltage; voltage 1.2 V; Abstracts; Monitoring; Stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021671
