Title :
A simulation model for PDSOI MOSFETs
Author :
Jianhui Bu ; Ying Li ; Jiajun Luo ; Zhengsheng Han
Author_Institution :
Inst. of Microelectron., Beijing, China
Abstract :
The shallow source and drain is used in the PDSOI technology. Unfortunately, most of the standard commercial SOI MOSFET model is for the device with deep source and drain, the necessity of the new models for this device arises. A simulation model is proposed based on the 0.13μm PDSOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS), and then the model is well verified by the ring-oscillator.
Keywords :
MOSFET; oscillators; semiconductor device models; silicon-on-insulator; PDSOI MOSFETs; PDSOI process; PDSOI technology; ring-oscillator; silicon-on-insulator technology; simulation model; Abstracts; Buildings; Logic gates; MOSFET; Semiconductor device modeling; Substrates; Device model; PDSOI; PN; junction;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021673
