Title :
Design and optimization of Field Limiting Rings termination for 1200V 4H-SiC VDMOSFETs
Author :
Ruibin Huo ; Huajun Shen ; Yun Bai ; Xufang Zhang ; Chengzhan Li
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´an, China
Abstract :
Based on the impact ionization theory, along with a series of improved models for 4H-SiC material, the breakdown characteristics simulations of 4H-SiC MOSFETs with Field Limiting Rings (FLRs) are performed in this paper with Atlas of Silvaco TCAD. 1200V 4H-SiC MOSFETs with different spaces FLRs are presented and a maximum breakdown voltage of 1940V is achieved with an optimized 15 FLRs. The optimization method for FLRs design is also discussed.
Keywords :
MOSFET; impact ionisation; semiconductor device breakdown; semiconductor device models; silicon compounds; technology CAD (electronics); wide band gap semiconductors; Atlas; SiC; Silvaco TCAD; VDMOSFET; field limiting rings termination; impact ionization theory; voltage 1200 V; voltage 1940 V; Abstracts; IP networks; MOSFET; Optimization; Performance evaluation; Semiconductor device modeling; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021676
