Improved performance of 4H-SiC MOSFETs with nonuniform P well implantation

An improved 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with nonuniform doped P well is introduced and the electrical performances are analyzed in this paper. A comparable breakdown voltage of 2248V, a higher saturation drain current Idsat=0.2mA, a lower threshold voltage Vth=2.17V and a much higher maximum transconductance gm=0.02mS than the traditional ones are achieved with the proposed P well design, which also simplify the design and fabrication of 4H-SiC MOSFETs.