Title :
A 44-GHz HEMT doubler/amplifier chain
Author :
Chow, P.D. ; Hwang, Y. ; Garske, D. ; Velebir, J. ; Yen, H.C.
Author_Institution :
TRW Electron. Syst. Group, Redondo Beach, CA, USA
Abstract :
A 44-GHz doubler was designed and fabricated using 100- mu *0.15- mu m InGaAs high-electron-mobility transistor (HEMT) and microwave integrated circuit (MIC) circuit. The doubler shows a minimum conversion loss of 1.4 dB with 0.4-dBm output power and 1.6-dBm maximum output power with 3.4-dB conversion loss. A 44-GHz InGaAs HEMT doubler-amplifier chain was also fabricated, demonstrating 10-dBm power, 7-dB overall gain, and 2-GHz bandwidth at the output frequency.<>
Keywords :
III-V semiconductors; frequency multipliers; gallium arsenide; high electron mobility transistors; indium compounds; microwave integrated circuits; 1.4 dB; 2 GHz; 3.4 dB; 44 GHz; 7 dB; HEMT doubler/amplifier chain; III-V semiconductors; InGaAs; conversion loss; high-electron-mobility transistor; maximum output power; microwave integrated circuit; minimum conversion loss; output power; Broadband amplifiers; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; MESFETs; Microwave integrated circuits; Power amplifiers; Power generation; Power system harmonics;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99652
