Title :
Design of a 800V VDMOS termination structure
Author :
Kepang Wu ; Quanyuan Feng ; Xiaorong Gao ; Xiaopei Chen
Author_Institution :
Inst. of Microelectron., Southwest Jiaotong Univ., Chengdu, China
Abstract :
The termination structure of 800 V VDMOS has been designed, which consists of the floating field limit ring and the filed plate to reduce the peak of the electric field and make it flat at the silicon surface. By the simulation, the breakdown-voltage 880 V has been achieved with 230 μm length termination structure, and the termination´s reliability has been improved owing to 2.4E+5 V*cm-1 of the maximum surface electric field. The process technology of this device is simple without additional masks and steps.
Keywords :
MOS integrated circuits; electric fields; integrated circuit design; integrated circuit reliability; power MOSFET; VDMOS termination structure design; filed plate; floating field limit ring; maximum surface electric field; power MOSFET; process technology; size 230 mum; termination reliability; voltage 800 V; voltage 880 V; Abstracts; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021680
