Title :
On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection
Author :
Seong Bin Kim ; Jongmin Geum ; Sinsu Kyoung ; Man Young Sung
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
To protect power MOSFET gate oxide from ESD in fundamentally, On-chip ESD protecting circuits are required. In this paper, stacked punchthrough diode made of doped polysilicon between gate pad and source pad is suggested for 900 V power MOSFET gate ESD protection. The suggested device was designed and analyzed in electrical characteristics by TCAD simulation. Based on this analysis, stacked punchthrough diode for 900 V power MOSFET gate ESD protection is optimized.
Keywords :
electrostatic discharge; power MOSFET; power semiconductor diodes; silicon; ESD protection; TCAD simulation; doped polysilicon; electrical characteristics; on-chip stacked punchthrough diode; power MOSFET gate oxide; voltage 900 V; Breakdown voltage; Doping; Electrostatic discharges; Logic gates; MOSFET; Semiconductor diodes; System-on-chip;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021681
