• DocumentCode
    242523
  • Title

    A one-piece compact model for tunneling FETs

  • Author

    Zelei Sun ; Li Zhang ; Jinyu Zhang ; Zhiping Yu

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A new, one-piece tunneling FET compact model has been developed based on its physical characteristics. By introducing the drain threshold voltage, the nonlinear current increase in the normally linear region of the output characteristics is modeled. The model prediction has been compared with several experimental data and good agreement is achieved.
  • Keywords
    field effect transistors; tunnel transistors; drain threshold voltage; nonlinear current; normally linear region; one-piece compact model; physical characteristics; tunneling FET; Abstracts; Lead;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021686
  • Filename
    7021686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=242523