Title :
Parameter optimization of PT-IGBT breakdown voltage
Author :
Tzu-Lang Shih ; Chih-Chuan Chang ; Wen-Hsi Lee
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
This paper discusses the benefits of different N-drift doping concentration and terminal guard ring diversification on PT-IGBT(Punch Through) breakdown characteristic. The concept IGBT structure consists of MOS components and bipolar components. The former provided by the high-frequency effect, which provides high voltage. In order to increase the breakdown voltage, the N-drift layer concentration needs to be reduced, caused slower on/off switching loss, thermal issue, and power energy loss. The structure optimization is presented and its functionality is verified by 2D simulations with SILVACO TCAD.
Keywords :
insulated gate bipolar transistors; optimisation; semiconductor device breakdown; semiconductor doping; 2D simulations; IGBT structure; MOS components; N-drift doping concentration; N-drift layer concentration; PT-IGBT breakdown voltage; SILVACO TCAD; bipolar components; high-frequency effect; off switching loss; on switching loss; parameter optimization; power energy loss; structure optimization; terminal guard ring diversification; thermal issue; Abstracts; Breakdown voltage; Electric breakdown;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021688
