Title :
Investigation of charge relaxation of dielectrics for capacitive micro-actuators
Author :
San, Haisheng ; Zheng, Xiaoshan ; Zhao, Zhiwen ; Li, Gang ; Chen, Xuyuan
Author_Institution :
Pen-Tung Sah Micro-Nano Technol. Res. Center, Xiamen Univ., Xiamen, China
Abstract :
The experimental characterization for metal-insulator-semiconductor (MIS) capacitor by using the capacitance versus voltage (C-V) measurement is used to investigate the characteristics of dielectrics discharging in capacitive micro-actuator. The Al/SiNx/n-Si capacitors were prepared for experimental measurement. The charge relaxation characteristics were obtained by the C-V measurements after different electrical stresses in the MIS capacitors. The experimental results show different discharging mechanisms for electron and hole in silicon-rich nitride films. The method is direct and simple to be used in assessing the dielectrics quality for reliable capacitive micro-actuators.
Keywords :
MIS capacitors; dielectric materials; dielectric relaxation; discharges (electric); microactuators; C-V measurement; MIS capacitor; capacitance versus voltage measurement; capacitive microactuator reliability; dielectric charge relaxation; dielectric quality; discharging mechanisms; electrical stresses; experimental characterization; experimental measurement; metal-insulator-semiconductor capacitor; silicon-rich nitride films; MIS capacitor; capacitive micro-actuator; discharging; relaxation time;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-6543-9
DOI :
10.1109/NEMS.2010.5592128
