Investigation of charge relaxation of dielectrics for capacitive micro-actuators

Author

San, Haisheng ; Zheng, Xiaoshan ; Zhao, Zhiwen ; Li, Gang ; Chen, Xuyuan

Author_Institution

Pen-Tung Sah Micro-Nano Technol. Res. Center, Xiamen Univ., Xiamen, China

fYear

2010

fDate

20-23 Jan. 2010

Firstpage

1

Lastpage

4

Abstract

The experimental characterization for metal-insulator-semiconductor (MIS) capacitor by using the capacitance versus voltage (C-V) measurement is used to investigate the characteristics of dielectrics discharging in capacitive micro-actuator. The Al/SiNx/n-Si capacitors were prepared for experimental measurement. The charge relaxation characteristics were obtained by the C-V measurements after different electrical stresses in the MIS capacitors. The experimental results show different discharging mechanisms for electron and hole in silicon-rich nitride films. The method is direct and simple to be used in assessing the dielectrics quality for reliable capacitive micro-actuators.

Keywords

MIS capacitors; dielectric materials; dielectric relaxation; discharges (electric); microactuators; C-V measurement; MIS capacitor; capacitance versus voltage measurement; capacitive microactuator reliability; dielectric charge relaxation; dielectric quality; discharging mechanisms; electrical stresses; experimental characterization; experimental measurement; metal-insulator-semiconductor capacitor; silicon-rich nitride films; MIS capacitor; capacitive micro-actuator; discharging; relaxation time;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on

Conference_Location

Xiamen

Print_ISBN

978-1-4244-6543-9

Type

conf

DOI

10.1109/NEMS.2010.5592128

Filename

5592128