Title :
High Speed Direct Digital Synthesis for Next Generation RF Systems
Author_Institution :
HRL Lab., Malibu, CA
Abstract :
Direct digital synthesizers ICs using 0.25 mum InP HBT technologies with clock rates promise to extend the range of such devices to clock rates in excess of 30 GHz. In this work, we report progress towards this goal with the fabrication circuits with improved clock speed at 25 GHz with an approximate clock frequency/power consumption figure-of-merit of 2.5 GHz/W
Keywords :
III-V semiconductors; bipolar MMIC; direct digital synthesis; heterojunction bipolar transistors; indium compounds; 0.25 mum; 25 GHz; InP; InP HBT technologies; fabrication circuits; high speed direct digital synthesis; next generation RF systems; Bandwidth; CMOS technology; Clocks; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit synthesis; Integrated circuit technology; Radio frequency; Signal synthesis; Synthesizers; Digital synthesis; InP; Integrated Circuit;
Conference_Titel :
Radio and Wireless Symposium, 2007 IEEE
Conference_Location :
Long Beach, CA
Print_ISBN :
1-4244-0445-2
Electronic_ISBN :
1-4244-0445-2
DOI :
10.1109/RWS.2007.351858
