DocumentCode
2426072
Title
Cause of data retention loss in a nitride-based localized trapping storage flash memory cell
Author
Tsai, W.J. ; Gu, S.H. ; Zous, N.K. ; Yeh, C.C. ; Liu, C.C. ; Chen, C.H. ; Wang, Tahui ; Pan, Sam ; Lu, Chih-Yuan
Author_Institution
Macronix Int. Co. Ltd, Hsin-Chu, Taiwan
fYear
2002
fDate
2002
Firstpage
34
Lastpage
38
Abstract
Data retention loss in a localized trapping storage flash memory cell with a SONOS type structure is investigated. Both charge loss through the bottom oxide and lateral migration of trapped charges in the nitride layer are considered for the data retention loss. Charge pumping and charge separation methods are used in this study. Our results reveal that in normal operation condition the retention loss is mainly caused by charge leakage via P/E stress created oxide traps.
Keywords
flash memories; SONOS structure; charge leakage; charge pumping; charge separation; data retention loss; lateral charge migration; localized trapping storage flash memory cell; nitride layer; oxide trap; program/erase stress; Charge pumps; Data engineering; Density measurement; Electron traps; Electronics industry; Fabrication; Flash memory cells; Industrial electronics; SONOS devices; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN
0-7803-7352-9
Type
conf
DOI
10.1109/RELPHY.2002.996607
Filename
996607
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