DocumentCode :
2426101
Title :
Empirical model for fatigue of PZT ferroelectric memories
Author :
Rodriguez, J. ; McPherson, J. ; Moise, T. ; Summerfelt, S. ; Aggarwal, S. ; Udayakumar, K.R. ; Gilbert, S. ; Dunn, C.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
2002
fDate :
2002
Firstpage :
39
Lastpage :
44
Abstract :
Switched polarization fatigue was investigated for CVD PZT ferroelectric films of thickness <100 nm. The data shows that negligible switched polarization degradation occurs during an initial incubation period, CTF*, which can last up to ∼108 polarization reversal cycles. This incubation period was found to be process dependent but nearly independent of cycling voltage and temperature. For cycles beyond CTF*, however, the data begins to show a strong exponential field dependence and a weak (∼0.1 eV) temperature dependence. An empirical model has been developed which describes the "Cycles to Failure" data quite well for these PZT thin films. Because of the large voltage-acceleration factor observed, the model can be used to demonstrate an equivalent fatigue lifetime at the expected operating voltage with relatively short test times.
Keywords :
CVD coatings; dielectric polarisation; fatigue; ferroelectric storage; ferroelectric thin films; lead compounds; reliability; CVD ferroelectric films; PZT; PbZrO3TiO3; cycles to failure data; cycling voltage; empirical model; equivalent fatigue lifetime; ferroelectric memories; incubation period; operating voltage; polarization reversal cycles; switched polarization fatigue; temperature dependence; test times; voltage-acceleration factor; Acceleration; Degradation; Fatigue; Ferroelectric films; Ferroelectric materials; Hysteresis; Nonvolatile memory; Polarization; Temperature dependence; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
Type :
conf
DOI :
10.1109/RELPHY.2002.996608
Filename :
996608
Link To Document :
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