DocumentCode
2426128
Title
On-the-fly variation tolerant mapping in crossbar nano-architectures
Author
Tunc, Cihan ; Tahoori, Mehdi B.
Author_Institution
Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fYear
2010
fDate
19-22 April 2010
Firstpage
105
Lastpage
110
Abstract
In hybrid nano-architectures, self-assembled nanoscale crossbars are fabricated on top of a reliable CMOS subsystem. Bottom-up self-assembly nanofabrication process, used in nano-architectures, yields nanodevices with significantly more variations compared to the conventional top-down lithography used in CMOS fabrication. This is in addition to an increased defect density expected for self-assembled nanodevices. Therefore, it is one of the major design challenges to tolerate variation and defects in emerging nano architectures. In this paper, we present an alternative approach for variation and defect tolerant mapping in which no application-independent test and characterization (defect and variation map) is required. The variation tolerant mapping is done on-the-fly which can ultimately be transformed into built-in self-mapping. Different mapping algorithms are presented and their efficiencies in terms of variation and defect tolerance as well as mapping time are compared. The experimental results show that the proposed heuristic mapping algorithm can achieve the same success rate with the exhaustive method in terms of meeting required timing constraints with orders of magnitude fewer reconfiguration retries.
Keywords
CMOS integrated circuits; fault tolerance; integrated circuit design; integrated circuit reliability; nanoelectronics; nanofabrication; self-assembly; CMOS subsystem; defect density; defect tolerance; on-the-fly variation tolerant mapping; self-assembled nanoscale crossbars; self-assembly nanofabrication; CMOS technology; Fabrication; Lithography; Logic functions; Manufacturing; Nanobioscience; Nanofabrication; Nanowires; Self-assembly; Testing; crossbars; defect tolerance; emerging nano technologies; on-the-fly mapping; variation tolerance;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Test Symposium (VTS), 2010 28th
Conference_Location
Santa Cruz, CA
ISSN
1093-0167
Print_ISBN
978-1-4244-6649-8
Type
conf
DOI
10.1109/VTS.2010.5469605
Filename
5469605
Link To Document