Gate oxide reliability of drain-side stresses compared to gate stresses

The gate oxide breakdown voltages of stresses applied to the gates of transistors are compared to the gate oxide breakdown voltages of stresses applied to the drains of transistors. The breakdown voltages for the drain-side stress are shown to be higher than the breakdown voltages for the gate stress. Using TCAD simulation data of a drain-side stress, the differences in breakdown voltages between the drain stresses and the gate stresses are compared to predictions of the gate oxide lifetime for various gate-stress and drain-stress cases.