Title :
NBT-induced hot carrier (HC) effect: positive feedback mechanism in p-MOSFET´s degradation
Author :
Aono, H. ; Murakami, E. ; Okuyama, K. ; Makabe, K. ; Kuroda, K. ; Watanabe, K. ; Ozaki, H. ; Yanagisawa, K. ; Kubota, K. ; Ohji, Y.
Abstract :
We demonstrate a new mode of Hot-Carrier (HC) degradation of p-MOSFETs. A positive feedback HC degradation caused by positive fixed oxide charge increasing the electric field at the drain edge is observed. When TTL AC stress (HC and NBT stress one after another) is applied, this degradation is enhanced. It is assumed that NBT stress produces positive fixed oxide charges easily (NBT-induced HC degradation). It is also shown that this new degradation can be suppressed by halo design.
Keywords :
MOSFET; hot carriers; interface states; semiconductor device reliability; NBT-induced hot carrier effect; TTL AC stress; drain edge; electric field; halo design; negative bias temperature; p-MOSFETs; positive feedback HC degradation; positive fixed oxide charge; Degradation; Electric fields; Feedback; Hot carriers; MOSFET circuits; Oxidation; Stress measurement; Temperature; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
DOI :
10.1109/RELPHY.2002.996613
