DocumentCode
24265
Title
Next-Generation Nanoelectromechanical Switch Contact Materials: A Low-Power Mechanical Alternative to Fully Electronic Field-Effect Transistors.
Author
Streller, Frank ; Wabiszewski, Graham E. ; Carpick, Robert W.
Author_Institution
Univ. of Pennsylvania, Philadelphia, PA, USA
Volume
9
Issue
1
fYear
2015
fDate
Mar-15
Firstpage
18
Lastpage
24
Abstract
The deficiency of existing electrical contact materials is currently a significant impediment to the commercialization of nanoelectromechanical (NEM) contact switches?a low-power ?beyond complementary metal-oxide semiconductor (CMOS) technology?. NEM switches using traditional metallic electrical contact materials, even those composed of inert, noble metals such as gold (Au) and platinum (Pt), demonstrate premature failure due to either their adhesiveness or catalytic activity, leading to a buildup of insulating interfacial contaminants. Commercially viable NEM switches demand novel contact materials along with efficient methods to evaluate the performance of these materials.
Keywords
MOSFET; catalysis; field effect transistor switches; insulating materials; nanocontacts; nanoelectromechanical devices; nanostructured materials; CMOS technology; NEM contact switch; catalytic activity; complementary metal-oxide semiconductor technology; electronic field-effect transistor; insulating interfacial contaminant; low-power mechanical alternative; metallic electrical contact material; next-generation nanoelectromechanical switch contact material; Capacitors; Consumer electronics; Current measurement; Films; Flash memories; Nanoscale devices; Nonvolatile memory; Silicides; Switching circuits; Transistors;
fLanguage
English
Journal_Title
Nanotechnology Magazine, IEEE
Publisher
ieee
ISSN
1932-4510
Type
jour
DOI
10.1109/MNANO.2014.2373451
Filename
7012080
Link To Document