• DocumentCode
    24265
  • Title

    Next-Generation Nanoelectromechanical Switch Contact Materials: A Low-Power Mechanical Alternative to Fully Electronic Field-Effect Transistors.

  • Author

    Streller, Frank ; Wabiszewski, Graham E. ; Carpick, Robert W.

  • Author_Institution
    Univ. of Pennsylvania, Philadelphia, PA, USA
  • Volume
    9
  • Issue
    1
  • fYear
    2015
  • fDate
    Mar-15
  • Firstpage
    18
  • Lastpage
    24
  • Abstract
    The deficiency of existing electrical contact materials is currently a significant impediment to the commercialization of nanoelectromechanical (NEM) contact switches?a low-power ?beyond complementary metal-oxide semiconductor (CMOS) technology?. NEM switches using traditional metallic electrical contact materials, even those composed of inert, noble metals such as gold (Au) and platinum (Pt), demonstrate premature failure due to either their adhesiveness or catalytic activity, leading to a buildup of insulating interfacial contaminants. Commercially viable NEM switches demand novel contact materials along with efficient methods to evaluate the performance of these materials.
  • Keywords
    MOSFET; catalysis; field effect transistor switches; insulating materials; nanocontacts; nanoelectromechanical devices; nanostructured materials; CMOS technology; NEM contact switch; catalytic activity; complementary metal-oxide semiconductor technology; electronic field-effect transistor; insulating interfacial contaminant; low-power mechanical alternative; metallic electrical contact material; next-generation nanoelectromechanical switch contact material; Capacitors; Consumer electronics; Current measurement; Films; Flash memories; Nanoscale devices; Nonvolatile memory; Silicides; Switching circuits; Transistors;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1932-4510
  • Type

    jour

  • DOI
    10.1109/MNANO.2014.2373451
  • Filename
    7012080