Title :
High current transmission line pulse (TLP) and ESD characterization of a silicon germanium heterojunction bipolar transistor with carbon incorporation
Author :
Ronan, B. ; Voldman, S. ; Lanzerotti, L. ; Rascoe, J. ; Sheridan, D. ; Rajendran, K.
Author_Institution :
Silicon Germanium Dev., IBM Commun. Res. & Dev. Center, Essex Junction, VT, USA
Abstract :
Electrostatic discharge robustness of an epitaxial-base pseudomorphic Silicon Germanium Heterojunction Bipolar Transistor (HBT) device with Carbon incorporation is shown for the first time. Experimental results show that incorporation of Carbon in the base of a SiGe HBT device improves power-to-failure variation by improved control of the base width and base width distribution.
Keywords :
Ge-Si alloys; carbon; electrostatic discharge; failure analysis; heterojunction bipolar transistors; semiconductor materials; SiGe:C; base width; base width distribution; carbon incorporation; electrostatic discharge; epitaxial-base pseudomorphic silicon-germanium heterojunction bipolar transistor; power-to-failure variation; transmission line pulse; Boron alloys; Electrostatic discharge; Germanium silicon alloys; Heterojunction bipolar transistors; Impurities; Indium phosphide; Power transmission lines; Semiconductor films; Silicon germanium; Transmission lines;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
DOI :
10.1109/RELPHY.2002.996632
