A comparative study of switching losses of IGBTs under hard-switching, zero-voltage-switching and zero-current-switching

Author

Wang, Kunrong ; Lee, Fred C. ; Hua, Guichao ; Borojevic, Dum

Author_Institution

Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

fYear

1994

fDate

20-25 Jun 1994

Firstpage

1196

Abstract

A high power IGBT tester, based on the typical clamped inductive load circuit and incorporating zero-voltage-transition and zero-current-transition soft-switching schemes, has been developed. Both turn-on losses, including the losses associated with reverse recovery of the clamp (free-wheeling) diode, and turn-off losses are measured and compared for slow and fast IGBT devices. Benefits of zero-voltage-switching (ZVS) and zero-current-switching (ZCS) operation of IGBTs are demonstrated. The ZVS operation can reduce the total switching losses by more than half, while the ZCS reduces them by about 25% when compared with hard-switching. The ZCS turn-off also relieves the voltage stress of the IGBTs

Keywords

diodes; insulated gate bipolar transistors; losses; power semiconductor switches; semiconductor device testing; semiconductor diodes; switching circuits; IGBT; clamped inductive load circuit; free-wheeling diode; hard-switching; reverse recovery; soft-switching; switching losses; turn-on losses; zero-current-switching; zero-current-transition switching; zero-voltage-switching; zero-voltage-transition switching; Circuit testing; Insulated gate bipolar transistors; Pulse width modulation; Pulse width modulation converters; Resonance; Switches; Switching circuits; Switching loss; Zero current switching; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE

Conference_Location

Taipei

Print_ISBN

0-7803-1859-5

Type

conf

DOI

10.1109/PESC.1994.373834

Filename

373834