DocumentCode
2426756
Title
Reliability test of MESFETs in presence of hot electrons
Author
Mil´shtein, S. ; Ersland, P. ; Gil, C.
Author_Institution
ECE Dept., Univ. of Massachusettes, Lowell, MA, USA
fYear
2002
fDate
2002
Firstpage
230
Lastpage
234
Abstract
Temperature profiles of hot electrons were modeled in MESFETs undergoing stress tests, where the gate voltage was close to pinch-off and the drain voltage was slightly lower than breakdown. These profiles were compared with the results of degradation during the stress. We present the results of two-terminal hot electron stress on MESFETs, and discuss the probability of various defect formations resulting from this stress.
Keywords
Schottky gate field effect transistors; hot carriers; life testing; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; MESFETs; breakdown; defect formations; degradation; drain voltage; gate voltage; hot electrons; pinch-off; probability; reliability test; stress tests; temperature profiles; two-terminal stress; Breakdown voltage; Degradation; Electrons; Equations; FETs; MESFETs; Scattering; Software testing; Stress; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN
0-7803-7352-9
Type
conf
DOI
10.1109/RELPHY.2002.996641
Filename
996641
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