Title :
A relation model of yield and reliability for the gate oxide failures
Author :
Kim, Taeho ; Kuo, Way ; Chien, Wei-Ting Kary
Author_Institution :
Dept. of Ind. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
Yield and reliability are two important factors affecting the profitability of semiconductor manufacturing. By using the relationship between yield and reliability, which is based on the defect reliability physics, and combining this with fault coverage, the authors develop a model to predict the gate oxide reliability of integrated circuits (ICs). This model explains well some previous experimental results performed to verify the relationship between yield and reliability and will help identify extrinsic failure mechanisms or electrical degradation caused by defects
Keywords :
failure analysis; integrated circuit reliability; integrated circuit yield; reliability theory; defect reliability physics; electrical degradation; extrinsic failure mechanisms; fault coverage; fault identification; gate oxide failures; gate oxide reliability; integrated circuits; profitability; reliability modelling; semiconductor manufacturing; yield modelling; Circuit faults; Failure analysis; Integrated circuit modeling; Integrated circuit reliability; Integrated circuit yield; Physics; Predictive models; Profitability; Semiconductor device manufacture; Semiconductor device reliability;
Conference_Titel :
Reliability and Maintainability Symposium, 1998. Proceedings., Annual
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-4362-X
DOI :
10.1109/RAMS.1998.653815
