Title :
High-sensitivity 1-Gb/s CMOS receiver integrated with a III-V photodiode by wafer-bonding
Author :
Nakahara, T. ; Tsuda, H. ; Tateno, K. ; Ishihara, N. ; Amano, C.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
Abstract :
We have developed a wafer-bonded hybrid receiver using 0.5-/spl mu/m CMOS that operates with a single 3.3-V supply voltage. The receiver circuit is small and simple, has high sensitivity and a broad bandwidth, and operates at either 0.85 or 1.55 /spl mu/m due to the direct attachment of the III-V photodiode without parasitic capacitance.
Keywords :
CMOS analog integrated circuits; integrated optoelectronics; low-power electronics; operational amplifiers; optical receivers; photodiodes; wafer bonding; 0.5 micron; 0.85 micron; 1 Gbit/s; 1.55 micron; 3.3 V; CMOS photoreceiver; III-V photodiode integrated; broad bandwidth; high-sensitivity; hybrid receiver; transimpedance amplifier; wafer-bonding; Bandwidth; CMOS process; Driver circuits; III-V semiconductor materials; Inverters; Optical amplifiers; Optical receivers; Photodiodes; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, 2000. Digest of the LEOS Summer Topical Meetings
Conference_Location :
Aventura, FL, USA
Print_ISBN :
0-7803-6252-7
DOI :
10.1109/LEOSST.2000.869680
