Title :
Hybrid GaAs MQW modulators and detectors flip-chip bonded to silicon CMOS circuitry
Author :
Chen, H.D. ; Liang, K. ; Zeng, Q.M. ; Li, X.J. ; Chen, Z.B. ; Du, Y. ; Wu, R.H.
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
We demonstrated the hybrid integration of reflection-mode, surface-normal GaAs/AlGaAs MQW modulator and detector array directly over 1 /spl mu/m silicon CMOS circuitry via flip-chip solder bonding. Some MQW devices were used as input-light detectors and others served as output-light modulators, which were designed for 850 nm wavelength operation. The GaAs/AlGaAs MQW structure was grown by molecular beam epitaxy. In order to increase the absorption of the intrinsic region, the period of quantum wells was chosen to be 90 pairs and decreased the thickness of AlGaAs barriers for decreasing for operation voltage.
Keywords :
CMOS integrated circuits; III-V semiconductors; VLSI; aluminum compounds; electro-optical modulation; flip-chip devices; gallium arsenide; integrated optoelectronics; optical receivers; photodetectors; quantum well devices; 850 nm; CMOS circuitry; GaAs-AlGaAs; MQW modulator; detector array; flip-chip solder bonding; hybrid integration; input-light detectors; optoelectronic VLSI; output-light modulators; reflection-mode surface-normal; Absorption; Bonding; Circuits; Detectors; Gallium arsenide; Molecular beam epitaxial growth; Quantum well devices; Sensor arrays; Silicon; Voltage;
Conference_Titel :
Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, 2000. Digest of the LEOS Summer Topical Meetings
Conference_Location :
Aventura, FL, USA
Print_ISBN :
0-7803-6252-7
DOI :
10.1109/LEOSST.2000.869681
