Title :
Beam quality in field emitter arrays
Author :
Liu, Y.F. ; Lau, Y.Y.
Author_Institution :
Dept. of Nucl. Eng., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Summary form only given, as follows. The emerging field of vacuum microelectronics offers exciting possibilities in miniature coherent radiation sources, flat panel displays, and ultra-fast logic circuits. The crucial component is the electron emitter, which consists of an array of sharp tips from which electrons undergo field emission according to the Fowler-Nordheim (FN) relation. In this paper, we present a theoretical analysis of the beam emittance and of the beam brightness expected from a field emitter array. Scaling laws for these quantities are constructed that take into account of the electric field enhancement factors that accompany the sharp tips, and they are derived in a manner consistent with the FN relation. These scaling laws can immediately be used once the following parameters are given: the width and height, as well as the packing density, of the field emitter array, the anode-cathode (A-K) spacing, the A-K voltage drop, and the FN coefficients A, and B. The space-charge limited regime will also be explored.
Keywords :
electron beams; electron field emission; space-charge limited devices; vacuum microelectronics; Fowler-Nordheim relation; anode-cathode spacing; beam brightness; beam emittance; beam quality; electron emitter; field emitter arrays; flat panel displays; miniature coherent radiation sources; scaling laws; space-charge limited regime; ultrafast logic circuits; vacuum microelectronics; voltage drop; Capacitance; Dielectric breakdown; Electrodes; Electron beams; Fabrication; Field emitter arrays; Joining materials; Semiconductor materials; Silicon; Voltage;
Conference_Titel :
Plasma Science, 1995. IEEE Conference Record - Abstracts., 1995 IEEE International Conference on
Conference_Location :
Madison, WI, USA
Print_ISBN :
0-7803-2669-5
DOI :
10.1109/PLASMA.1995.533526