Enhanced plasma charging damage due to AC charging effect

Author

Jin, Y. ; Teo, W.Y. ; Hou, Y.T. ; Gn, F.H. ; Lim, H.F. ; Han, Z.Y. ; Li, M.F.

Author_Institution

Chartered Semicond. Manuf. Ltd, Singapore, Singapore

fYear

2002

fDate

2002

Firstpage

359

Lastpage

364

Abstract

Plasma charging damage from high density plasma (HDP) inter metal dielectrics (IMD) deposition process was found to be drastically enhanced as metal antenna is placed at higher interconnect layers. Such charging damage enhancement was ascribed to AC charging effect. By coupling with non-uniform plasma potential in HDP tools, the AC charging effect made important contributions to the final charging damages. A modified charge sharing model was used to interpret the dependence of AC charging damages on the location of metal antenna on interconnected layers.

Keywords

antennas in plasma; dielectric thin films; integrated circuit interconnections; plasma deposited coatings; surface charging; AC charging effect; charge sharing model; high density plasma deposition; inter metal dielectric; interconnect layer; metal antenna; plasma charging damage; plasma potential; Computer aided manufacturing; Dielectrics; Filtering; Integrated circuit interconnections; Manufacturing processes; Plasma applications; Plasma density; Plasma materials processing; Plasma sources; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2002. 40th Annual

Print_ISBN

0-7803-7352-9

Type

conf

DOI

10.1109/RELPHY.2002.996660

Filename

996660