DocumentCode :
2427252
Title :
Enhanced plasma charging damage due to AC charging effect
Author :
Jin, Y. ; Teo, W.Y. ; Hou, Y.T. ; Gn, F.H. ; Lim, H.F. ; Han, Z.Y. ; Li, M.F.
Author_Institution :
Chartered Semicond. Manuf. Ltd, Singapore, Singapore
fYear :
2002
fDate :
2002
Firstpage :
359
Lastpage :
364
Abstract :
Plasma charging damage from high density plasma (HDP) inter metal dielectrics (IMD) deposition process was found to be drastically enhanced as metal antenna is placed at higher interconnect layers. Such charging damage enhancement was ascribed to AC charging effect. By coupling with non-uniform plasma potential in HDP tools, the AC charging effect made important contributions to the final charging damages. A modified charge sharing model was used to interpret the dependence of AC charging damages on the location of metal antenna on interconnected layers.
Keywords :
antennas in plasma; dielectric thin films; integrated circuit interconnections; plasma deposited coatings; surface charging; AC charging effect; charge sharing model; high density plasma deposition; inter metal dielectric; interconnect layer; metal antenna; plasma charging damage; plasma potential; Computer aided manufacturing; Dielectrics; Filtering; Integrated circuit interconnections; Manufacturing processes; Plasma applications; Plasma density; Plasma materials processing; Plasma sources; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
Type :
conf
DOI :
10.1109/RELPHY.2002.996660
Filename :
996660
Link To Document :
بازگشت