Application of diode laser spectroscopy for moisture contamination measurement in semiconductor processing

Author

McAndrew, J. ; Inman, R. ; Znamnensky, D.

Author_Institution

Air Liquide, Countryside, IL, USA

fYear

2000

fDate

24-28 July 2000

Abstract

The applications of tunable diode laser absorption spectroscopy (TDLAS) to a variety of semiconductor process environments, including RTP, CVD and etch, are discussed. TDLAS has been demonstrated to be compatible with aggressive gases such as HCl, NH/sub 3/, SiH/sub 2/Cl/sub 2/, etc. and with strongly depositing atmospheres as in Si/sub 3/N/sub 4/ LPCVD. In addition, it has been shown to be capable of trace moisture measurements to 50 ppb in pure NH/sub 3/ and to 10 ppb in a variety of corrosive gases including HCl. These applications are discussed as are the key differences in approach required for in situ and for high-purity gas measurement.

Keywords

clean rooms; infrared spectroscopy; measurement by laser beam; moisture measurement; process monitoring; spectrochemical analysis; CVD environments; RTP environments; corrosive gases; etch environments; high-purity gas measurement; in situ gas measurement; moisture contamination measurement; process gas monitoring; semiconductor process environments; trace moisture measurements; tunable diode laser absorption spectroscopy; Absorption; Atmosphere; Contamination; Diode lasers; Etching; Gases; Moisture measurement; Pollution measurement; Spectroscopy; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, 2000. Digest of the LEOS Summer Topical Meetings

Conference_Location

Aventura, FL, USA

ISSN

1099-4742

Print_ISBN

0-7803-6252-7

Type

conf

DOI

10.1109/LEOSST.2000.869708

Filename

869708