Modeling kinetics of gate oxide reliability using stretched exponents

In this work, we propose a novel approach to modeling the kinetics of gate oxide reliability, using the stretched-exponential form. We show how the dispersive nature of characteristic times pertaining to kinetic transitions during oxide degradation, are very well captured by stretched-exponential functions. We demonstrate their use in common oxide reliability concerns such as hot-carrier injection and negative bias temperature instability. The use of the stretched exponents to model oxide reliability is demonstrated with two real examples.