Title :
In situ Raman spectroscopic characterization of compound semiconductor free carrier concentration
Author :
Maslar, J.E. ; Wang, C.A. ; Oakley, D.C.
Author_Institution :
Chem. Sci. & Technol. Lab., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Recently, developments in detectors, filters, and laser technology now make Raman spectroscopy more attractive as an in situ probe. The objective of this work is to develop and evaluate Raman spectroscopy as an in situ, spatially resolved probe of compound semiconductor electrical properties for use in process monitoring and control.
Keywords :
Carrier density; III-V semiconductors; Process monitoring; Raman spectra; Raman spectroscopy; Semiconductor epitaxial layers; III-V compound semiconductor; coupled phonon-plasmon mode; epitaxial layers; film heating; free carrier concentration; in situ Raman spectroscopy; process control; process monitoring; spatially resolved probe; Chemical technology; Filters; Holography; Laboratories; Optical films; Phase measurement; Raman scattering; Spectroscopy; Substrates; Temperature;
Conference_Titel :
Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, 2000. Digest of the LEOS Summer Topical Meetings
Conference_Location :
Aventura, FL, USA
Print_ISBN :
0-7803-6252-7
DOI :
10.1109/LEOSST.2000.869719
