Electrical characterization of copper penetration effects in silicon dioxide

Author

Cluzel, Jacques ; Mondon, François ; Blachier, Deins ; Morand, Yves ; Martel, Laurent ; Reimbold, Gilles

Author_Institution

Lab d´´Electron. et de Technol. de l´´Inf., CEA/DRT, Grenoble, France

fYear

2002

fDate

2002

Firstpage

431

Lastpage

432

Abstract

Understanding of electrical and physical copper behavior in dielectric materials is required for efficient analysis of copper contamination reliability issues. This work is based on temperature and bias-temperature stressing of copper-gate MOS capacitors, which allow both capacitance-voltage and leakage current analysis. Electrical results are consistent with SIMS analysis and provide a physical basis for studying interconnect reliability with respect to copper contamination.

Keywords

MOS capacitors; capacitance; copper; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; leakage currents; secondary ion mass spectra; silicon compounds; surface contamination; thermal stresses; C-V characteristics; C-time characteristics; Cu-SiO₂; SIMS analysis; bias-temperature stressing; capacitance-voltage analysis; copper behavior electrical characterization; copper contamination reliability analysis; copper interconnects; copper-gate MOS capacitors; dielectric materials; leakage current analysis; physical copper behavior; secondary ion mass spectroscopy; silicon dioxide copper penetration effects; temperature stressing; Annealing; Capacitance-voltage characteristics; Contamination; Copper; Current measurement; Leakage current; Silicon compounds; Stress; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2002. 40th Annual

Print_ISBN

0-7803-7352-9

Type

conf

DOI

10.1109/RELPHY.2002.996681

Filename

996681