A complete study of SILC effects on E2PROM reliability

In this paper, we investigate SILC effects on E²PROM reliability: the influence of Program/Erase bias and cycle number, of oxide thickness scaling and quality, and of storage field on retention properties of E²PROM memory cell. To accomplish this task, we use a recently proposed compact E²PROM model, extended to include SILC, thus bridging the gap between oxide quality characterization activity performed on MOS test structures, and its actual impact on E²PROM memories.