• DocumentCode
    2427921
  • Title

    IR characterization of carbon-black for thermopile infrared detectors

  • Author

    Xue, Chenyang ; Wang, Kaiqun ; Liang, Ting ; Zhang, Wendong ; Xiong, Jijun

  • Author_Institution
    Nat. Key Lab. for Electron. Meas. Technol., North Univ. of China, Taiyuan, China
  • fYear
    2010
  • fDate
    20-23 Jan. 2010
  • Firstpage
    963
  • Lastpage
    966
  • Abstract
    In this paper, the p-poly-Si/Al thermopile infrared detector, with a single layer of low-stress SiNx membrane, instead of previous designed thin sandwich layer membrane of SiO2-Si3N4 is presented. Meanwhile, we investigate the influence of carbon-black coating on the output response of the detector. Infrared (IR) transmission spectra measurements made on absorbing area of the detector with carbon-black and without carbon-black reveal that IR absorbance to different wavelengths is enhanced distinctly, especially from 1μm to 8μm, when carbon-black is evaporated on the surface of the detector. Based on the IR transmission spectra and the output voltage measurements, the response sensitivity and the specific detecitivity of the detector without carbon-black are 12.45V/W, 4.64×107 cmHz(1/2) W-1, respectively; while the response sensitivity and the specific detecitivity of the detector with carbon-black are 13.30 V/W, 4.96×107 cmHz(1/2) W-1. The output response of the detector increases by 6.9%, when carbon-black is applied to the surface of the absorbing area of the detector.
  • Keywords
    aluminium; infrared detectors; infrared spectra; silicon; thermopiles; voltage measurement; IR transmission spectra; Si-Al; carbon-black coating; infrared transmission spectra measurement; low-stress membrane; response sensitivity; specific detecitivity; thermopile infrared detector; voltage measurement; IR transmission spectra; detectivity; sensitivity; thermopile infrared detector;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
  • Conference_Location
    Xiamen
  • Print_ISBN
    978-1-4244-6543-9
  • Type

    conf

  • DOI
    10.1109/NEMS.2010.5592246
  • Filename
    5592246