Abstract :
The following topics are dealt with: power semiconductor technology; high voltage IC technology; power MOSFET; IGBT; low voltage devices; DMOS technology; SOI power devices; HEMT; high voltage diodes; smart power technologies; JFET; wide band gap semiconductor devices; superjunction; and BJT.
Keywords :
MOS integrated circuits; high electron mobility transistors; insulated gate bipolar transistors; junction gate field effect transistors; low-power electronics; power MOSFET; power integrated circuits; power transistors; silicon-on-insulator; wide band gap semiconductors; BJT; DMOS technology; HEMT; IGBT; JFET; SOI power devices; high voltage IC technology; high voltage diodes; low voltage devices; power MOSFET; power semiconductor technology; smart power technologies; superjunction; wide band gap semiconductor devices;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
DOI :
10.1109/ISPSD.2009.5157976
