DocumentCode :
2428674
Title :
A Statistical Approach For Characterizing The Thermal Impact Of TIM Voids
Author :
Ankireddi, Sai ; Copeland, David
Author_Institution :
Semicond. Packaging, Sun Microsystems Inc., Sunnyvale, CA
fYear :
2007
fDate :
18-22 March 2007
Firstpage :
79
Lastpage :
82
Abstract :
Traditional methods of TIM (thermal interface material) void content specification are often based on a worst case analysis and can often lead to conservative and expensive lid attach design/process development, especially in high performance microprocessor package designs that are the norm today. In a meaningful departure from such methods, we present a practical approach to specify the maximum void content using the methods of statistical analysis. Our approach lends itself to a simple design paradigm where the business side of the package development drives the concept of an acceptable fallout level (AFL) and the technical specifications dictate the acceptable coolable power loss (ACPL). Together, these concepts are tied to a unique void content specification that is significantly less conservative than a worst-case approach, and readily meets the requirements of the design. We illustrate this novel approach for the simple case of TIM voids that have an area-wise uniform probability distribution, and compare the findings with a traditional worst-case void content specification.
Keywords :
electronics packaging; statistical analysis; voids (solid); TIM voids; acceptable coolable power loss; acceptable fallout level; microprocessor package designs; statistical approach; thermal impact; thermal interface material void content specification; uniform probability distribution; Conducting materials; Cooling; Electronic packaging thermal management; Production; Semiconductor device packaging; Silicon; Statistical analysis; Sun; Thermal conductivity; Thermal resistance; TIM; interfaces; statistical analysis; thermal impact; voids;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 2007. SEMI-THERM 2007. Twenty Third Annual IEEE
Conference_Location :
San Jose, CA
ISSN :
1065-2221
Print_ISBN :
1-4244-09589-4
Electronic_ISBN :
1065-2221
Type :
conf
DOI :
10.1109/STHERM.2007.352390
Filename :
4160891
Link To Document :
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