A 3.7GHz 130nm CMOS-SOI class E RF power amplifier

Author

Andia, Luis ; Belot, Didier ; Villegas, Martine ; Baudoin, Geneviève

Author_Institution

Innovation & Collaborative Res., ST Microelectron., Crolles, France

fYear

2010

fDate

12-14 April 2010

Firstpage

1

Lastpage

4

Abstract

A 23 dBm class E power amplifier (PA) has been designed and simulated at 3.7 GHZ using a 130 nm CMOS-SOI technology. The PA is a single stage, single ended cascode formed by a thin oxide transistor as common source device and a laterally diffused MOS (LDMOS) transistor as common gate. Fully integrated high current inductor is used as part of the class E wave shaping network. At 3.7 GHz, the PA achieves more than 60% PAE and a gain of 17 dB with 6 dBm driving signal.

Keywords

CMOS analogue integrated circuits; MOSFET; power amplifiers; radiofrequency amplifiers; silicon-on-insulator; CMOS-SOI technology; LDMOS transistor; class E wave shaping network; class-E RF power amplifier; frequency 3.7 GHz; high current inductor; laterally diffused MOS transistor; size 130 nm; thin oxide transistor; Breakdown voltage; CMOS process; CMOS technology; Inductors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Switches; Topology; Power amplifier; cascode; class-E; radio transceivers; sel-biasing technique; silicon-on-insulator;

fLanguage

English

Publisher

ieee

Conference_Titel

Sarnoff Symposium, 2010 IEEE

Conference_Location

Princeton, NJ

Print_ISBN

978-1-4244-5592-8

Type

conf

DOI

10.1109/SARNOF.2010.5469731

Filename

5469731