Title :
Enhancement-mode GaN hybrid MOS-HFETs on Si substrates with Over 70 A operation
Author :
Kambayashi, Hiroshi ; Satoh, Yoshihiro ; Niiyama, Yuki ; Kokawa, Takuya ; Iwami, Masayuki ; Nomura, Takehiko ; Kato, Sadahiro ; Chow, T. Paul
Author_Institution :
Yokohama R&D Lab., Furukawa Electr., Co., Ltd., Yokohama, Japan
Abstract :
We report on the demonstration of enhancement-mode n-channel GaN-based hybrid MOS-HFETs realized on AlGaN/GaN heterostructure on silicon substrates with a large drain current operation. The GaN-based hybrid MOS HFETs realized the threshold voltage of 2.8 V, the maximum drain current of over 70 A with the channel width of 340 mm. This is the best value for an enhancement-mode GaN-based FET. The specific on-state resistance was 16.5 mOmegacm2. The breakdown voltage was over 500 V. These results suggest that this structure is a good candidate for power switching applications.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; AlGaN-GaN; Si; breakdown voltage; hybrid MOS-HFET; maximum drain current; on-state resistance; power switching applications; size 340 mm; threshold voltage; Aluminum gallium nitride; Electron mobility; FETs; Gallium nitride; HEMTs; MODFETs; MOSFETs; Surface resistance; Thermal conductivity; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5157991
