• DocumentCode
    2428926
  • Title

    730V, 34mΩ-cm2 lateral epilayer RESURF GaN MOSFET

  • Author

    Huang, W. ; Chow, T.P. ; Niiyama, Y. ; Nomura, T. ; Yoshida, S.

  • Author_Institution
    Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2009
  • fDate
    14-18 June 2009
  • Firstpage
    29
  • Lastpage
    32
  • Abstract
    We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good trade-off between breakdown voltage and specific on-resistance for the first time. Device with 4 mum channel length and 16 mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmega-cm2 (VG-VT=20 V).
  • Keywords
    III-V semiconductors; MOSFET; gallium compounds; semiconductor device breakdown; semiconductor epitaxial layers; wide band gap semiconductors; GaN; MOSFET; breakdown voltage; lateral epilayer RESURF; n-channel GaN epilayer; size 16 mum; size 4 mum; specific on-resistance; voltage 730 V; Electron mobility; Epitaxial layers; Etching; Fabrication; Gallium nitride; Implants; MOSFET circuits; Research and development; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
  • Conference_Location
    Barcelona
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-3525-8
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • DOI
    10.1109/ISPSD.2009.5157993
  • Filename
    5157993
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2428926