Title :
Effect of variation in channel thickness on eigenenergies of double triangular quantum well in double gate InAlAs/InGaAs HEMT
Author :
Verma, Naveen ; Parveen ; Jogi, Jyotika
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
The aim of this paper is to study the effect on eigenenergies due to variation in channel thickness where the channel comprises of a nanoscale symmetric double triangular quantum well (DTQW) separated by a barrier for double heterostructure double gate InAlAs/InGaAs HEMT. The eigenenergies are calculated analytically by solving one-dimensional (1D) time independent Schrodinger equation in the channel at equilibrium i.e. when no gate voltage is applied. The channel thickness variation implies an independent effect of different barrier width and well widths for the DTQW system. In particular, ground and first excited energy state for various barrier width and well widths are studied and presented in the paper.
Keywords :
III-V semiconductors; Newton-Raphson method; Schrodinger equation; eigenvalues and eigenfunctions; high electron mobility transistors; indium compounds; quantum well devices; semiconductor device models; 1D time independent Schrodinger equation; DTQW system; InAlAs-InGaAs; Newton-Raphson method; double triangular quantum well; eigenenergies; heterostructure double gate HEMT; high electron mobility transistors; nanoscale symmetric DTQW; HEMTs; Indium gallium arsenide; Logic gates; Mathematical model; Nanoscale devices; Schrodinger equation; Schrodinger equation; channel thickness; double gate HEMT; double triangular quantum well (DTQW); eigenenergies;
Conference_Titel :
TENCON 2014 - 2014 IEEE Region 10 Conference
Conference_Location :
Bangkok
Print_ISBN :
978-1-4799-4076-9
DOI :
10.1109/TENCON.2014.7022286
