Effect of variation in channel thickness on eigenenergies of double triangular quantum well in double gate InAlAs/InGaAs HEMT

Author

Verma, Naveen ; Parveen ; Jogi, Jyotika

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

fYear

2014

fDate

22-25 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

The aim of this paper is to study the effect on eigenenergies due to variation in channel thickness where the channel comprises of a nanoscale symmetric double triangular quantum well (DTQW) separated by a barrier for double heterostructure double gate InAlAs/InGaAs HEMT. The eigenenergies are calculated analytically by solving one-dimensional (1D) time independent Schrodinger equation in the channel at equilibrium i.e. when no gate voltage is applied. The channel thickness variation implies an independent effect of different barrier width and well widths for the DTQW system. In particular, ground and first excited energy state for various barrier width and well widths are studied and presented in the paper.

Keywords

III-V semiconductors; Newton-Raphson method; Schrodinger equation; eigenvalues and eigenfunctions; high electron mobility transistors; indium compounds; quantum well devices; semiconductor device models; 1D time independent Schrodinger equation; DTQW system; InAlAs-InGaAs; Newton-Raphson method; double triangular quantum well; eigenenergies; heterostructure double gate HEMT; high electron mobility transistors; nanoscale symmetric DTQW; HEMTs; Indium gallium arsenide; Logic gates; Mathematical model; Nanoscale devices; Schrodinger equation; Schrodinger equation; channel thickness; double gate HEMT; double triangular quantum well (DTQW); eigenenergies;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2014 - 2014 IEEE Region 10 Conference

Conference_Location

Bangkok

ISSN

2159-3442

Print_ISBN

978-1-4799-4076-9

Type

conf

DOI

10.1109/TENCON.2014.7022286

Filename

7022286