Title :
Contactless measurement of recombination lifetime in photovoltaic materials
Author :
Ahrenkiel, R.K. ; Johnston, Steven
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
Contactless measurement of important semiconductor parameters has become a popular trend of current semiconductor technology. Here we describe an improved version of radio frequency photoconductive decay (RFPCD) operating in the ultra-high frequency (UHF) region. This work shows that the improved technique is capable of measuring samples ranging in size from submicron thin films to large silicon ingots. The UHF region is an ideal compromise for volume penetration and lifetime resolution with system response of 10 ns or less
Keywords :
UHF measurement; carrier lifetime; elemental semiconductors; photoconductivity; silicon; surface recombination; Si; UHF region; contactless measurement; lifetime resolution; photovoltaic materials; radio frequency photoconductive decay; recombination lifetime; semiconductor technology; silicon ingots; submicron thin films; system response; ultra-high frequency region; Current measurement; Photoconductivity; Photovoltaic systems; Radiative recombination; Radio frequency; Semiconductor thin films; Silicon; Size measurement; Solar power generation; UHF measurements;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.653939
