DocumentCode
2429262
Title
Bipolar Schottky rectifier: A novel two carrier Schottky rectifier based on superjunction concept
Author
Khemka, Vishnu ; Zhu, Ronghua ; Khan, Tahir ; Huang, Weixiao ; Fu, Yue ; Xu, Cheng ; Hui, Paul ; Ger, Muh-ling ; Rodriquez, Pete
Author_Institution
Analog & Mixed Signal Technol., Freescale Semicond., Inc., Tempe, AZ, USA
fYear
2009
fDate
14-18 June 2009
Firstpage
92
Lastpage
95
Abstract
In this paper, a novel Schottky diode structure based on the superjunction concept is proposed. The concept is based on 2-carrier current conduction and utilizes both P and N columns for current conduction. The proposed device utilized the P and N superjunction columns to achieve high breakdown with low leakage current.
Keywords
Schottky diodes; electric breakdown; electrical conductivity; leakage currents; solid-state rectifiers; 2-carrier current conduction; Schottky diode structure; bipolar Schottky rectifier; breakdown; leakage current; superjunction; Breakdown voltage; Clamps; Electric breakdown; Leakage current; Metalworking machines; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor materials; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location
Barcelona
ISSN
1943-653X
Print_ISBN
978-1-4244-3525-8
Electronic_ISBN
1943-653X
Type
conf
DOI
10.1109/ISPSD.2009.5158009
Filename
5158009
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