New self heating structures for thermal coupling modeling on multi-fingered SOI power devices

Author

Hniki, S. ; Bertrand, G. ; Morancho, F. ; Ortolland, S. ; Minondo, M. ; Rauber, B. ; Raynaud, C. ; Giry, A. ; Bon, O. ; Jaouen, H.

Author_Institution

STMicroelectronics FRANCE, Crolles, France

fYear

2009

fDate

14-18 June 2009

Firstpage

96

Lastpage

99

Abstract

Understanding self-heating effect is essential in order to analyze and model the performances of high power transistors. In this paper a new test structure to model thermal coupling on multi-fingered devices is proposed. This structure allows extracting thermal coupling coefficients between different sources. Applied in the case of NLDEMOS devices on SOI technology, a basic model for these coefficients is deduced. Therefore, the thermal profile of the transistor is well reproduced.

Keywords

elemental semiconductors; power semiconductor devices; semiconductor device models; silicon; silicon-on-insulator; NLDEMOS devices; SOI technology; Si; multifingered SOI power devices; self heating structures; thermal coupling coefficients; thermal coupling modeling; thermal profile; transistor; Circuit testing; Electrical resistance measurement; Electronic mail; Fingers; Heating; Integrated circuit technology; Silicon on insulator technology; Substrates; Temperature sensors; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on

Conference_Location

Barcelona

ISSN

1943-653X

Print_ISBN

978-1-4244-3525-8

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2009.5158010

Filename

5158010