New self heating structures for thermal coupling modeling on multi-fingered SOI power devices

Understanding self-heating effect is essential in order to analyze and model the performances of high power transistors. In this paper a new test structure to model thermal coupling on multi-fingered devices is proposed. This structure allows extracting thermal coupling coefficients between different sources. Applied in the case of NLDEMOS devices on SOI technology, a basic model for these coefficients is deduced. Therefore, the thermal profile of the transistor is well reproduced.