GaAs pseudomorphic HEMTs for low voltage high frequency DC-DC converters

Author

Pala, V. ; Varadarajan, K. ; Chow, T.P.

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2009

fDate

14-18 June 2009

Firstpage

120

Lastpage

123

Abstract

Efficient power conversion at high switching frequencies requires switching transistors with a low gate charge to limit the switching losses in addition to low specific ON resistance. We report two integrable GaAs switching pHEMTs, 14 V enhancement mode and 7 V depletion mode transistors that show much superior switching figure of merit (R_on times Q_G) than that of state-of-the-art silicon MOSFETs. These transistors can achieve highly efficient DC-DC power conversion at 100 MHz and beyond.

Keywords

III-V semiconductors; convertors; gallium arsenide; power HEMT; power conversion; DC-DC power conversion; GaAs; depletion mode transistors; frequency 100 MHz; gate charge; power conversion; pseudomorphic HEMT; silicon MOSFET; switching frequencies; switching losses; switching pHEMT; switching transistors; DC-DC power converters; Frequency conversion; Gallium arsenide; Low voltage; MOSFETs; PHEMTs; Power conversion; Silicon; Switching frequency; Switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on

Conference_Location

Barcelona

ISSN

1943-653X

Print_ISBN

978-1-4244-3525-8

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2009.5158016

Filename

5158016