DocumentCode :
2429628
Title :
Optically-activated gate control of power semiconductor device switching dynamics
Author :
Mazumder, Sudip K. ; Sarkar, Tirthajyoti
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL, USA
fYear :
2009
fDate :
14-18 June 2009
Firstpage :
152
Lastpage :
155
Abstract :
Modulation of the switching dynamics of a power semiconductor device (PSD) using an optically-triggered power transistor (OTPT), which controls the gate excitation of the PSD, is outlined and experimentally demonstrated. The core concept is the integration of width- and intensity-modulation for the optical triggering beam. Key issues related to the OTPT design, optical interfacing, and hybrid integration with the PSD die are discussed. Scalability of this concept is demonstrated across a range of PSD types (power MOSFET, IGBT, and vertical JFET) and material platforms (Si and SiC).
Keywords :
power semiconductor devices; switching; gate excitation; intensity modulation; optically-activated gate control; optically-triggered power transistor; power semiconductor device; switching dynamics; width modulation; Integrated optics; Optical beams; Optical control; Optical design; Optical devices; Optical modulation; Power semiconductor devices; Power semiconductor switches; Power transistors; Scalability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
ISSN :
1943-653X
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
Type :
conf
DOI :
10.1109/ISPSD.2009.5158024
Filename :
5158024
Link To Document :
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