Title :
Evaluation of oscillatory phenomena in reverse operation for High Voltage Diodes
Author :
Nakamura, Katsumi ; Iwanaga, Hiroshi ; Okabe, Hiroaki ; Saito, Shoji ; Hatade, Kazunari
Author_Institution :
Power Device Works, Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
We have researched breaking the trade-off limitations between the overall loss and the reverse recovery softness of High Voltage (HV) freewheeling diodes. For the first time, our results show that the oscillatory phenomena in the reverse operation for HV diodes originate in the enlarging behavior of the space charge region to the cathode side during reverse operation and the extracting hole velocity at the end of the recovery period. The remaining hole of the cathode side affects the slowing and reduces the above behavior. We call this phenomenon the ldquorelaxing electric field effectrdquo at the cathode side. The novel HV diode structure can provide the necessary relaxing electric field effect for improving the soft recovery performance by employing the new Relaxed Field of Cathode (RFC) that utilizes LPT(II) technology. The RFC concept demonstrates a clear trade-off breakthrough between the overall loss and the reverse recovery softness of HV diodes.
Keywords :
cathodes; diodes; power electronics; recovery; space charge; cathode side affects; high voltage freewheeling diodes; hole velocity; oscillatory phenomena; relaxing electric field effect; reverse recovery softness; soft recovery performance; space charge region; Anodes; Cathodes; Charge carrier lifetime; Diodes; Research and development; Safety; Semiconductor optical amplifiers; Space charge; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5158025