Title :
Comparison of high power IGBTs and hard driven GTOs for high power inverters
Author :
Bernet, S. ; Teichmann, R. ; Zuckerberger, A. ; Steimer, P.
Author_Institution :
ABB Corp. Res., Heidelberg, Germany
Abstract :
The paper compares hard driven GTOs (IGCTs) and high power IGBT modules in a two level PWM inverter. The structure, fundamental operation, and specific characteristics of the considered devices are shown. Simulations enable a loss comparison of IGCTs and IGBTs in a 1.14 MVA inverter at switching frequencies of fs=250 Hz/500 Hz. The evaluation of device characteristics is the basis for a derivation of potential applications
Keywords :
PWM invertors; commutation; insulated gate bipolar transistors; losses; switching circuits; thyristor convertors; 1.14 MVA; 250 Hz; 500 Hz; commutated thyristors; fundamental operation; hard driven GTO; high power IGBT; high power inverters; loss comparison; structure; switching frequencies; two level PWM inverter; Aluminum; Insulated gate bipolar transistors; Power semiconductor switches; Protection; Pulse width modulation inverters; Semiconductor diodes; Silicon; Switching frequency; Thyristors; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1998. APEC '98. Conference Proceedings 1998., Thirteenth Annual
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-4340-9
DOI :
10.1109/APEC.1998.653976
