IGBT dynamics for short-circuit and clamped inductive switching

Author

Trivedi, Malay ; Shenai, Krishna

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

Volume

2

fYear

1998

fDate

15-19 Feb 1998

Firstpage

743

Abstract

This paper reports and compares the internal dynamics of IGBT under short circuit and clamped inductive switching stress. The performance of IGBTs under short circuit and clamped inductive load conditions has been studied in detail with the aid of extensive measurements and numerical simulations. An advanced mixed device and circuit simulator is employed to study the internal dynamics of latch-up free punch-through IGBT. It is shown that thermally assisted avalanche breakdown of IGBT under the two stress conditions occurs due to localized high temperature generation in different regions of the device

Keywords

avalanche breakdown; failure analysis; insulated gate bipolar transistors; short-circuit currents; switching; IGBT dynamics; IGBT failure; advanced mixed device simulator; circuit simulator; clamped inductive switching; clamped inductive switching stress; internal dynamics; latch-up free punch-through IGBT; localized high temperature generation; numerical simulations; short circuit switching stress; short-circuit switching; thermally assisted avalanche breakdown; Circuit optimization; Circuit simulation; Equations; Insulated gate bipolar transistors; Lattices; Semiconductor optical amplifiers; Switching circuits; Temperature; Thermal stresses; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1998. APEC '98. Conference Proceedings 1998., Thirteenth Annual

Conference_Location

Anaheim, CA

Print_ISBN

0-7803-4340-9

Type

conf

DOI

10.1109/APEC.1998.653981

Filename

653981