Title :
Power device stacking using surface bump connections
Author :
Castellazzi, A. ; Mermet-Guyennet, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Nottingham, Nottingham, UK
Abstract :
This work presents a novel integration approach for silicon power devices. Considering the very widespread half-bridge interconnection of IGBTs and anti-parallel freewheeling diodes, the first prototype development and testing of a vertically integrated switch is described. This original solution is enabled by the use of surface bumps as a replacement of bond-wires and it opens up new ways for optimum volume exploitation in power system design and also brings along double sided cooling capability and reduced stray inductance.
Keywords :
bridge circuits; cooling; interconnections; power semiconductor diodes; power semiconductor switches; silicon; thermal management (packaging); IGBT; Si; antiparallel freewheeling diodes; bond-wires replacement; double sided chip cooling; functional prototypal half-bridge switch; half-bridge interconnection; integration approach; power system design; silicon power device stacking; stray inductance reduction; surface bump connections; vertically integrated switch; Bonding; Cooling; Diodes; Insulated gate bipolar transistors; Power system interconnection; Prototypes; Silicon; Stacking; Switches; Testing;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5158037
