Power device stacking using surface bump connections

Author

Castellazzi, A. ; Mermet-Guyennet, M.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Nottingham, Nottingham, UK

fYear

2009

fDate

14-18 June 2009

Firstpage

204

Lastpage

207

Abstract

This work presents a novel integration approach for silicon power devices. Considering the very widespread half-bridge interconnection of IGBTs and anti-parallel freewheeling diodes, the first prototype development and testing of a vertically integrated switch is described. This original solution is enabled by the use of surface bumps as a replacement of bond-wires and it opens up new ways for optimum volume exploitation in power system design and also brings along double sided cooling capability and reduced stray inductance.

Keywords

bridge circuits; cooling; interconnections; power semiconductor diodes; power semiconductor switches; silicon; thermal management (packaging); IGBT; Si; antiparallel freewheeling diodes; bond-wires replacement; double sided chip cooling; functional prototypal half-bridge switch; half-bridge interconnection; integration approach; power system design; silicon power device stacking; stray inductance reduction; surface bump connections; vertically integrated switch; Bonding; Cooling; Diodes; Insulated gate bipolar transistors; Power system interconnection; Prototypes; Silicon; Stacking; Switches; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on

Conference_Location

Barcelona

ISSN

1943-653X

Print_ISBN

978-1-4244-3525-8

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2009.5158037

Filename

5158037