MOSFET modeling for RF circuit design

In this paper, we discuss some important issues in MOSFET modeling for radio-frequency (RF) integrated-circuit (IC) design. We start with the introduction of the basics of RF modeling. A simple sub-circuit model is presented with comparisons of the data for both y parameter and f_T characteristics. Good model accuracy is achieved against the measurements for a 0.25 μm RF CMOS technology. The high frequency (HF) noise modeling issues are also discussed. A methodology to extract the channel thermal noise of MOSFETs from the HF noise measurements is presented and the concept of induced-gate noise is discussed briefly. The results of different noise modeling approaches are also given with the comparison of the measured data, with which the prediction capability of the HF noise behavior of any modeling approach can be examined