Title :
Fundamental scaling laws of DRAM dielectrics
Author :
Reisinger, H. ; Stengl, R.
Author_Institution :
Infineon Technol. Corp. Res., Munchen, Germany
Abstract :
Dynamic random access memories (DRAM) demand an ever increasing density of storage capacitors. We show that increasing the dielectric constant K of the capacitor dielectric will not help to meet future requirements. This is because the amount of charge stored on a given area has an upper physical limit. In fact if the scaling of DRAM feature sizes and supply voltages will follow the SIA roadmap, a maximum K-value of 500 to 1000 must not be exceeded for future DRAM generations
Keywords :
DRAM chips; MOS capacitors; dielectric thin films; permittivity; DRAM dielectrics; DRAM feature sizes; capacitor dielectric; dielectric constant; dynamic RAM; fundamental scaling laws; random access memories; storage capacitors; supply voltages; Capacitance; Capacitors; DRAM chips; Dielectric constant; Dielectric materials; Equations; Leakage current; Material properties; Random access memory; Voltage;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869832
